欢迎登录材料期刊网

材料期刊网

高级检索

用金属离子源在96Al2O3陶瓷表面注入不同能量和剂量的Ni离子,然后在镀液中进行化学镀铜.用扫描电镜、卢瑟福背散射能谱和X光电子能谱技术对注入层和镀层进行分析研究.结果表明:Ni离子注入可作为一种新的活化工艺,辅助Al2O3陶瓷化学镀铜;注入参数对后续化学镀覆有显著影响,注入获得表面Ni浓度高的镀覆效果较好,应选用低能量进行高剂量注入;试验条件下优选工艺参数为15keV,2.2×1017ions/cm2,该条件下开始化学镀铜的孕育期仅为45s,镀速达到52.43nm/min,镀层表面粗糙度为0.317μm,所得化学镀铜层均匀、致密,与基体结合紧密.

参考文献

[1] 刘建国,陈存华,郑家燊.非金属材料化学镀工艺中基体表面活化方法的研究[J].表面技术,2002(03):5-8.
[2] 谷新,王周成,林昌健.陶瓷表面化学镀的前处理工艺新进展[J].材料保护,2003(09):1-4.
[3] 刘燕萍.胶体钯量对非金属材料的金属覆层性能的影响[J].电镀与精饰,1997(03):29.
[4] Muralidhar GK.;Pogany A.;Sood DK.;Bhansali S. .Electron microscopy studies of ion implanted silicon for seeding electroless copper films[J].Journal of Applied Physics,1998(11 Pt.1):5709-5713.
[5] Bhansali S.;Sood DK. .SELECTIVE SEEDING OF COPPER FILMS ON POLYIMIDE-PATTERNED SILICON SUBSTRATE, USING ION IMPLANTATION[J].Sensors and Actuators, A. Physical,1996(1/3):126-131.
[6] Bhansali S;Seed D K .A novel technique for fabrication of metallic structures on polylmide by selective electrolcss copper plating using ion implantation[J].Thin Solid Films,1995,270(1-2):489-492.
[7] Li J H;Tsai Y Y;Chiu S Y.Palladium seeding on the tontalum-iusulated silicon oxide film by plasma immersion ion implantation for the growth of electroless copper[J].Thin Solid Films,2000:377-378,592-596.
[8] Semandi M;Gudze M;Evans P .Application of ion implantation to ceramic/metal joining[J].Nuclear Instruments and Methods in Physics Research B:Beam Interaction with Materials & Atoms,1997,127-128:669-672.
[9] Sood D K;Bhausali S;Evans P J et al.Ion implantation for nucleation of electrolesa Ni films on <100>Si[J].Seusors ond Actuators,1997,A62(1-3):705-710.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%