采用SRS00光谱光度计对甚高频等离子体增强化学气相沉积本征微晶硅薄膜过程进行了在线监测,分析了硅烷不同注入方式对等离子体光发射谱和薄膜结构的影响.结果表明,采用硅烷梯度注入时,等离子体中的Hα*、Hβ*和SiH*峰强度逐步升高,且高的Hα*/SiH*比值有利于高晶化率界面层的沉积;这与采用XRD分析薄膜的结构得到的结果一致.选择硅烷梯度注入方式沉积微晶硅薄膜电池本征层,在沉积速率为1 nm/s本征层厚度为2400 nm时,最终获得了光电转换效率为7.81％的单结微晶硅薄膜太阳能电池.
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