钛酸铋基铁电薄膜具有优良的铁电、介电性能,在非挥发性存储器件方面有很好的应用前景.本文分别从制备工艺、掺杂改性、疲劳特性的研究等方面综述了最新的研究进展,并对当前研究中存在的问题进行了讨论.
参考文献
| [1] | Park B H;Kang B S;Bu S D et al.[J].Nature,1999,401:682. |
| [2] | Hiroshi I;Masaru M;Kubo T .[J].Journal of Applied Physics,2001,90:4089. |
| [3] | Cummins S E;Cross L E .[J].Applied Physics Letters,1967,10:14. |
| [4] | Matsude H;Sachiko I;Takashi I .[J].Applied Physics Letters,2003,83:5023. |
| [5] | Zhang S T;Zhang X J;Cheng H W et al.[J].Applied Physics Letters,2003,83:4378. |
| [6] | 唐伟忠.薄膜材料制备原理、技术及应用[M].北京:冶金工业出版社,1999 |
| [7] | Ramesh R;Schlom D G .[J].Science,2002,296:1975. |
| [8] | Watanabe T;Funakubo H;Saito K et al.[J].Applied Physics Letters,2002,81:1660. |
| [9] | Zhai J W;Shen B;Yao X et al.[J].Journal of Crystal Growth,2004,267:110. |
| [10] | KimJS;KimSS;KimJK .[J].Japanese Journal of Applied Physics,2003,42:6486. |
| [11] | Hou F;Shen M R;Cao W W .[J].Thin Solid Films,2005,471:35. |
| [12] | Bae JC;Kim SS;Choi EK;Song TK;Kim WJ;Lee YI .Ferroelectric properties of lanthanum-doped bismuth titanate thin films grown by a sol-gel method[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2005(1/2):90-95. |
| [13] | Rokuka E;Hotta Y;Choi J H et al.[J].Japanese Journal of Applied Physics Part 1,2001,40:5564. |
| [14] | Higuchi T;Makoto N;Yuji H et al.[J].Japanese Journal of Applied Physics Part 1,2004,43:6585. |
| [15] | Kim J K;Kim S S;Kim J H .[J].Journal of Materials Research,2003,18:1884. |
| [16] | Kato K;Hiroshi I .[J].Key Engineering Materials,2003,248:41. |
| [17] | Chon U;Jang H M;Kim M G et al.[J].Physical Review Letters,2002,89:87601. |
| [18] | Choi E K;Kim S S;Kim J K et al.[J].Japanese Journal of Applied Physics,2004,43:237. |
| [19] | Garg A;Barbr Z H;Bawber M et al.[J].Applied Physics Letters,2003,83:2414. |
| [20] | Matsuda H;Ito S;Lijima T .[J].Applied Physics Letters,2003,83:5023. |
| [21] | Chon U;Shim J S;Jang H M .[J].Journal of Applied Physics,2003,93:4769. |
| [22] | hen M;Liu Z L;Wang Y et al.[J].Solid State Communications,2004,130:735. |
| [23] | Lim K T;Kim K T;Kim D P.South Korea:IEEE International Conference on Plasma Science[C].,2003:403. |
| [24] | Uong Chong;Kim K B;Jang H M et al.[J].Applied Physics Letters,2001,19:3137. |
| [25] | Kim SS;Bae JC;Kim WJ .Fabrication and ferroelectric studies of (Bi, Gd)(4)Ti3O12 thin films grown on Pt/Ti/SiO2/Si and p-type Si substrates[J].Journal of Crystal Growth,2005(3/4):394-401. |
| [26] | Kim J K;Song T K;Kim S S et al.[J].Materials Letters,2004,57:964. |
| [27] | LiW;YinY;Su D;ZhuJ S .[J].Journal of Applied Physics,2005,97:84102. |
| [28] | de Araujo C A P;Cuchiaro J D;McMillan L D et al.[J].NATURE,1995,374:627. |
| [29] | Chu M W;Ganne M;Caldes M T et al.[J].Physical Review B,2003,68:014102. |
| [30] | Lee J K;Kim C H;Suh H S et al.[J].Applied Physics Letters,2002,80:3593. |
| [31] | Dimos D.;Warren WL.;Tuttle BA.;Alshareef HN. .PHOTOINDUCED CHANGES IN THE FATIGUE BEHAVIOR OF SRBI2TA2O9 AND PB(ZR,TI)O-3 THIN FILMS[J].Journal of Applied Physics,1996(3):1682-1687. |
| [32] | Shareef H N A;Dimos D;Boyle T J et al.[J].Applied Physics Letters,1996,68:690. |
| [33] | Wu D;Li Ai D;Zhu T et al.[J].Applied Physics Letters,2000,76:2208. |
| [34] | Wu D.;Zhu T.;Liu ZG.;Ming NB.;Li AD. .Ferroelectric properties of Bi3.25La0.75Ti3O12 thin films prepared by chemical solution deposition[J].Journal of Applied Physics,2000(10):5941-5945. |
| [35] | Tagantsev A K;Stolichnov I;Colla E L et al.[J].Journal of Applied Physics,2001,90:1387. |
| [36] | Ding Y;Liu J S;Qin H X et al.[J].Applied Physics Letters,2001,78:4175. |
| [37] | 钟维烈.铁电体物理学[M].北京:科学出版社,2000:6. |
| [38] | Scott J F.铁电存储器[M].北京:清华大学出版社,2004:9. |
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