用电子回旋共振等离子体增强化学气相沉积(ECR-PECVD)法制备微晶硅薄膜,研究了放电气体对薄膜沉积速率、薄膜中H含量、择优取向和结晶度的影响.结果表明,以Ar作为放电气体时薄膜沉积速率比以H2作为放电气体时高1.5-2倍,但是薄膜的结晶度较低；以Ar作为放电气体时薄膜的H含量比以H2作为放电气体时的薄膜低;放电气体对薄膜的择优取向和晶粒度没有显著的影响.
参考文献
| [1] | B.Strahm,A.A.Howling,L.Sansonnens,Ch.Hollenstein,Plasma silane concentration as a determining factor for the transition from amorphous to microcrystalline silicon in SiH4/H2 discharges,Plasma Sources Sci.Technol.,16,80(2007) |
| [2] | S.Summers,H.S.Reehal,G.H.Shirkoohi,The effects of varying plasma parameters on silicon thin film growth by ECR plasma CVD,J.Phys.D:Appl.Phys.,34,2782(2001) |
| [3] | Madhusudan Jana,Debajyoti Das,Microcrystallisation in Si∶H:the effect of gas pressure in M-diluted SiH4 plasma,Solar Energy Materials & Solar Cells,79,519(2003) |
| [4] | M.Rondanini,S.Cereda,F.Montalenti,A multiscale model of the plasma assisted deposition of crystalline silicon,Surface & Coatings Technology,201,8863(2007) |
| [5] | J.K.Rath,Low temperature polycrystalline silicon:a review on deposition,physical properties and solar cell applications,Solar Energy Materials and Solar Cells,76,431(2003) |
| [6] | L.Sansonnens,A.A.Howling,Ch Hollenstein,The role of metastable atoms in argon-diluted silane radiofrequency plasmas,Journal of Physics D:Appllied Physics,27,1406(1994) |
| [7] | W.J.Soppe,C.Devilee,M.Geusebroek,The effect of argon dilution on deposition of microcrystalline silicon by microwave plasma enhanced chemical vapor deposition,Thin Solid Films,515,7490(2007) |
| [8] | T.Kamiya,K.Nakahata,A.Miida,Control of orientation from random to (220) or (400) in polycrystallline silicon films,Thin Solid Films,337,18(1999) |
| [9] | Madhumita Nath,P.Roca i Cabarrocas,E.V.Johnson,The open-circuit voltage in microcrystalline silicon solar cells of different degrees of crystallinity,Thin Solid Films,516,6974(2008) |
| [10] | T.Mates,A.Fejfar,I.Drbohlav,Role of grains in protocrystalline silicon layers grown at very low substrate temperatures and studied by atomic force microscopy,Journal of Non-Crystalline Solids,299-302,767(2002) |
| [11] | LIAO Naiman,LI Wei,JIANG Yadong,Recent progresses on the stability of hydrogenated amorphous silicon thin films,Materials Review,21,21 (2007)(廖乃镘,李伟,蒋亚东,氢化非晶硅(a-Si∶ H)薄膜稳定性的研究进展,材料导报,21,21(2007)) |
| [12] | H.Nickel,N.M.Johnson,J.Walker,Hydrogen-Induced Generation of Acceptorlike Defects in Polycrystalline Silicon,Physical Review Letters,75,3720(1995) |
| [13] | Madhusudan Jana,Debajyoti Das,A.K.Barua,Promotion of microcrystallization by argon in moderately hydrogen diluted silane plasma,Solar Energy Materials and Solar Cells,74,407(2002) |
| [14] | Debajyoti Das,Madhusudan Jana,A.K.Barua,Heterogeneity in microcrystalline-transition state:Origin of Si-nucleation and microcrystallization at higher rf power from Ar-diluted SiH4 plasma,Journal of Applied Physics,89,3041 (2001) |
| [15] | M.Zhu,Y.Cao,X.Guo,Microstructure of poly-Si thin films prepared at low temperatures,Solar Energy Materials and Solar Cells,62,109(2000) |
| [16] | Wen-Chu Hsiaoa,Chuan-Pu Liua,Ying-Lang Wang,Thermal properties of hydrogenated amorphous silicon prepared by high-density plasma chemical vapor deposition,Journal of Physics and Chemistry of Solids,69,648(2008) |
| [17] | G.Ambrosone,U.Coscia,S.Lettieri,Microcrystalline silicon thin films grown at high deposition rate by PECVD,Thin Solid Films,511-512,280(2006) |
| [18] | E.A.Davis,Hydrogen in silicon,Journal of Non-crystalline Solids,198-200,1(1996) |
| [19] | Rui Huang,Xuanying Lin,Wenyong Huang,Effect of hydrogen on the low-temperature growth of polycrystalline silicon film deposited by SiCl4/H2,Thin Solid Films,513,380(2006) |
| [20] | G.Ganguly.A.Matsuda,Importance of surface processes in defect formation in a-Si∶H,Journal of Non-crystalline Solids,164-166,31(1993) |
| [21] | G.Ganguly,A.Matsuda,Defect formation process during growth of hydrogenated amorphous silicon at high temperatrure,Japanese Journal of Appllied Physics,31,L 1269(1992) |
| [22] | K.Tachibana,T.Mukai,H.Harima,Measurement of absolute densities and spatial distribution of Si and SiH in an RF-discharge silane plasma for the chemical vapour:deposition of a-Si∶H films,Japanese Journal of Appllied Physics,30,L1208(1991) |
| [23] | A.Gallagher,Neutral radical deposition from silane discharges,Journal of Appllied Physics,63,2406(1988) |
| [24] | M.J.Kushner,A model for the discharge kinetics and plasma chemistry during plasma enhanced chemical vapor deposition of amorphous silicon,Journal of Appllied Physics,63,2532(1988) |
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