用射频磁控溅射法在CVD ZnS衬底上制备了HfO2薄膜,利用X射线衍射（XRD）,扫描电镜（SEM）、原子力显微镜（AFM）、傅里叶红外光谱（FTIR）和纳米力学探针对HfO2薄膜的结构和性能进行了分析和测试。结果表明,制备的HfO2为单斜相,膜层致密、表面平整、粗糙度仅为3.0 nm,硬度（7.3 GPa）显著高于衬底ZnS的硬度（2.6 GPa）。采用ZnO薄膜作过渡层,可有效提高HfO2与ZnS衬底的结合强度。单面镀制HfO2薄膜后,ZnS衬底在8-12μm长波红外波段的透过率最高可达81.5%,较之ZnS基体提高了5.8%,双面镀制HfO2薄膜后透过率最高可达90.5%,较之ZnS基体提高了14.8%,与理论计算结果吻合较好,适合作为ZnS窗口的增透保护膜。
Hafnium oxide( HfO2 ) anti-reflection and protective films were prepared on surface of CVD ZnS by RF magnetron sputtering process. The structure and properties of HfO2 films were examined by XRD, SEM, AFM, FTIR and nano-indentation tests. The results indicate that the structure of HfO2 films are monoclinic phase and the films are compact and plain. The hardness of HfO2 films is 7.3 GPa, which is much higher than 2. 6 GPa of CVD ZnS substrate. The ZnO interlayer was prepared as buffer layers for enhancing adhesion between the HfO2 films and CVD ZnS. The transmittance of CVD ZnS with HfO2films on single side and both sides are mostly increased to 81.5% and 90. 5 % in the wavelength range of 8 - 121zm, improved by 5.8% and 14.8% to the CVD ZnS substrate, respectively, which are agreement well with the theoretical values. HfO2 films are the excellent anti-reflection and protective fihns on ZnS windows.
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