Co掺杂对Ba0.6Sr0.4TiO3薄膜介电性能的影响

功能材料, 2006, 37(10): 1557-1560.

Co掺杂对Ba0.6Sr0.4TiO3薄膜介电性能的影响

印志强 ^1, , 孙小华 ^2, , 陈章红 ^3, , 李美亚 ^4, , 赵兴中 ^5,

1.武汉大学,物理学院,纳米科技中心,湖北,武汉,430072;绥化学院,物理系,黑龙江,绥化,152000

2.武汉大学,物理学院,纳米科技中心,湖北,武汉,430072

3.武汉大学,物理学院,纳米科技中心,湖北,武汉,430072

4.武汉大学,物理学院,纳米科技中心,湖北,武汉,430072

5.武汉大学,物理学院,纳米科技中心,湖北,武汉,430072

基金项目: 国家自然科学基金(6024003)

关键词： BSTC薄膜 , 溶胶-凝胶 , 介电特性 , 调谐性 , 品质因子FOM

The influence of Co doping on the dielectric properties of Ba0.6Sr0.4TiO3 thin films

利用溶胶凝胶工艺在Pt/TiO2/SiO2/Si衬底上制备了Co掺杂量为0～10%(摩尔分数)的(Ba0.6Sr0.4) Ti1-xCoxO3薄膜.研究了薄膜的结构、表面形貌、介电性能与Co掺杂量的关系.薄膜的介电损耗随着Co含量的增加而减少,在摩尔含量10%时达到最小值0.0128.FOM值在摩尔含量为2.5%达到最大值20,它的介电常数、介电损耗和调谐量分别为639.42、0.0218、43.6%.

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Co掺杂对Ba0.6Sr0.4TiO3薄膜介电性能的影响

The influence of Co doping on the dielectric properties of Ba0.6Sr0.4TiO3 thin films

参考文献