利用Sol-gel工艺在Pt/Ti/SiO2/Si衬底上制备了Pb(Zr0.53Ti0.47)O3(PZT)薄膜,研究了退火温度、保温时间和薄膜厚度对其晶相、微观结构和铁电性能的影响.在500℃退火处理的PZT薄膜开始形成钙钛矿相;在550℃退火处理的PZT薄膜基本形成钙钛矿相结构;升高退火温度(500～850℃)、延长保温时间(30～150min)、增加薄膜厚度(120～630nm)都有利于PZT晶粒的长大.在650～750℃退火的PZT薄膜具有较好的铁电性能,保温时间对PZT薄膜的铁电性能影响不大,PZT薄膜的厚度为200～300nm时可以得到比较好的铁电性能.在退火温度750℃、保温时间30min条件下退火处理厚310nm的PZT薄膜,其剩余极化值(2Pr)和矫顽电场(2Ec)分别是72μC/cm2、158kV/cm.
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