利用自制的抛光液和改造的抛光机对NiP基板进行电化学机械抛光,研究了抛光电压、抛光台转速、抛光压力和抛光液流速对材料去除速率的影响,对电化学机械抛光的机理做了初步的分析.研究结果表明,NiP基板可以用低压力(3.5 kPa)抛光,材料的去除速率可以通过调整抛光电压,抛光台转速和抛光液流速进行控制.
NiP basic substrates of hard disks were polished by electrochemical-mechanical polishing (ECMP) method with home-made slurry and a modified polisher.The effects of voltage,table rotation speed,pressure and slurry flow rate on the removal rate were investigated.The electrochemical mechanical polishing mechanism was primarily analyzed.The results show that NiP substrate can be polished with ECMP method at low pressure (3.5 kPa) and the material removal rate (MRR) can be controlled by adjusting polishing voltage,rotation speed of polishing table and slurry flow rate.
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