用直接键合技术在480℃实现了InP/GaAs的异质键合,用X射线光电子谱研究了样品的界面化学态.研究分析表明,InP/GaAs样品在480℃的键合过程中发生相互扩散(除P外),键合界面处形成了由InP、GaAs、InAs和GaP构成的中间过渡层,过渡层厚度约为6nm.
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