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  4. 6H-SiC材料与器件辐照效应的研究进展

材料导报, 2009, 23(5): 13-29.

6H-SiC材料与器件辐照效应的研究进展

牟维兵 1, , 龚敏 2, , 杨治美 3,

1.四川大学物理学院,成都,610064;中物院电子工程研究所,绵阳,621900

2.四川大学物理学院,成都,610064

3.四川大学物理学院,成都,610064

基金项目:   国防抗辐射加固技术研究基金(51311060102)  

关键词： 6H-SiC , 辐照效应 , 研究现状 , 发展趋势

Research Progress in Irradiation Effects of 6H-SiC Materials and Devices

介绍了6H-SiC材料和器件辐照效应研究的目的和方法,并对国内外最近几年的研究情况进行了介绍、分析和总结.指出目前的研究主要集中于辐射效应方面,但在抗辐射加固技术方面研究不足,国内应根据现有条件注重辐射效应机理方面的研究.

参考文献

[1] Barry A.L.;Lehmann B. .Energy dependence of electron damage and displacement threshold energy in 6H silicon carbide[J].IEEE Transactions on Nuclear Science,1991(6):1111-1115.
[2] Kerbiriou X;Barthe MF;Esnouf S;Desgardin P;Blondiaux G;Petite G .Silicon displacement threshold energy determined by electron paramagnetic resonance and positron annihilation spectroscopy in cubic and hexagonal polytypes of silicon carbide[J].Journal of Nuclear Materials: Materials Aspects of Fission and Fusion,2007(2/3):202-207.
[3] Son N T;Chen W M;Lindstrom J L et al.Carbon related defects in 4H-and 6H-SiC[J].Materials Science and Engineering,1999,B61(62):202.
[4] Gong M;Fung S;Beling C D .Electron-irradiation-induced deep levels in n-type 6H-SiC[J].Journal of Applied Physics,1999,85(11):7604.
[5] Davedov D V;Lebedev A A;Kozlovski V V et al.DLTS study of defects in 6H-and 4H-SiC created by proton irra-diation[J].Physica,2001,B308(02):641.
[6] von Bardeleben H J;Cantin J L .Electron irradiation induced defects in monocrystalline 4H-SiC and 6H-SiC:The influence of the electron energy and doping[J].Applied Surface Science,2001,184(05):237.
[7] Ling C C;Chen X D;Brauer G et al.Deep-level defects in n-type 6H silicon carbide induced by He implantation[J].Journal of Applied Physics,2005,98(06):41.
[8] Ha JH;Kang SM;Cho YH;Park SH;Kim HS;Lee JH;Lee NH;Kim YK;Kim JK .Schottky barrier heights of semi-insulating 6H-SiC irradiated by high-dose gamma-rays[J].Nuclear Instruments and Methods in Physics Research, Section A. Accelerators, Spectrometers, Detectors and Associated Equipment,2007(1):416-418.
[9] Seitz C;Magerl A;Hock R et al.Defect structures in neutron irradiated 6H-SiC studied by X-ray diffraction line profile analysis[J].Materials Research Society Symposium Proceedings,2001,640(07):641.
[10] Bratus V Ya;Petrenko T T;Von Bardeleben H J et al.Vacancy-related defects in ion-beam and electron irradiated 6H-SiC[J].Applied Surface Science,2001,184(05):229.
[11] Shalish I.;Altfeder IB.;Narayanamurti V. .Observations of conduction-band structure of 4H- and 6H-SiC - art. no. 073104[J].Physical Review.B.Condensed Matter,2002(7):3104-0.
[12] Jiang W.;Weber WJ.;Zhang Y.;Thevuthasan S.;Shutthanandan V. .Ion beam analysis of irradiation effects in 6H-SiC[J].Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms,2003(1):92-99.
[13] Kerbiriou X;Barthe M F;Esnouf S et al.Vacancy defects induced in the track region of 132MeV 12C irradiated SiC[J].Nuclear Instruments and Methods in Physics Research,2006,B250(02):259.
[14] Plaksin OA.;Stepanov VA.;Amekura H.;Kishimoto N. .Conductivity of SiC during neutron and proton irradiation[J].Journal of Nuclear Materials: Materials Aspects of Fission and Fusion,2002(Pt.b):1146-1151.
[15] Conrad J;Riddle T;Weber T et al.Irradiation effects in α-SiC studied via RBS-C,Raman-scattering and surface profiling[J].Nuclear Instruments and Methods in Physics Research,1996,B118(05):748.
[16] Ahoujja M;Crocket H C;Scott M B et al.Electrical cha-racterization of defects introduced in 4H-SiC during high energy proton irradiation and their annealing behavior[J].Materials Research Society Symposium Proceedings,2003,764(04):371.
[17] In-Tae Bae;Manabu Ishimaru;Yoshihiko Hirotsu .Structural changes of SiC under electron-beam irradiation:Temperature dependence[J].Nuclear Instruments and Methods in Physics Research,2006,B250(07):315.
[18] Jeon C;Nam J H;Song W et al.Chemical phase transitions of a Si oxide film on SiC by MeV electron beam irradiation[J].Applied Physics Letters,2007,91(04):1191.
[19] In-Tae Bae;William J. Weber;Manabu Ishimaru;Yoshihiko Hirotsu .Effect of ionization rates on dynamic recovery processes during electron-beam irradiation of 6H-SiC[J].Applied physics letters,2007(12):121910-1-121910-3-0.
[20] Katharria YS;Kumar S;Lakshmy PS;Kanjilal D .Self-organization of 6H-SiC(0001) surface under keV ion irradiation[J].Journal of Applied Physics,2007(4):44301-1-44301-6-0.
[21] W. Jiang;P. Nachimuthu;W. J. Weber;L Ginzbursky .Variation in lattice parameters of 6H-SiC irradiated to extremely low doses[J].Applied physics letters,2007(9):091918.1-091918.3.
[22] Hemmingsson C.;Kordina O.;Janzen E.;Lindstrom JL.;Son NT. .Capture cross sections of electron irradiation induced defects in 6H-SiC[J].Journal of Applied Physics,1998(2):704-708.
[23] Bruzzi M;Nava F;Russo S.Characterisation of silicon carbide detectors response to electron and photon irradiation[J].Diamond and Related Materials,2001(10):657.
[24] Weidner M;Frank T;Pensl G et al.Formation and annihilation of intrinsic-related defect centers in high energy electron-irradiated or ion-implanted 4H-and 6H-silicon carbide[J].Physica,2001,B308(03):633.
[25] Steeds J W;Evans G A;Danks L R et al.Transmission electron microscope radiation damage of 4H and 6H SiC stu-died by photoluminescence spectroscopy[J].Diamond and Related Materials,2002,141(11):1923.
[26] Castaldini A;Cavallini1 A;Riguttil L et al."Recovery" effect of electron induced damage in 4H-SiC schottky diodes[J].Materials Research Society Symposium Proceedings,2004,792(08):161.
[27] Pensl G;Ciobanu F;Frank T et al.Defect-engineering in SiC by ion implantation and electron irradiation[J].Microelectronic Engineering,2006,83(09):146.
[28] Jiang W;Zhang Y;Engelhard MH;Weber WJ;Exarhos GJ;Lian J;Ewing RC .Behavior of Si and C atoms in ion amorphized SiC[J].Journal of Applied Physics,2007(2):23524-1-23524-9-0.
[29] Redmann F;Kawasuso A;Petters K et al.Illumination effects in irradiated 6H n-type SiC observed by positron annihilation spectroscopy[J].Physica B,2001,342(08):308.
[30] Lebedev Alexandre A;Strelchuk Anatoly M;Kozlovski Vitali V et al.Studies of the effect of proton irradiation on 6H-SiC pn junction properties[J].Materials Science and Engineering,1999,B61(02):450.
[31] Jiang W.;Thevuthasan S.;Grotzschel R.;Weber WJ. .Irradiation effects and thermal annealing behavior in H-2(+)-implanted 6H-SiC[J].Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms,2000(0):374-378.
[32] Strelchuk A M;Kozlovski V V;Savkina N S et al.Steady-state lifetime of the nonequilibrium carriers in proton irradiated 6H-SiC pn structure[J].IEEE,1998,672(09):319.
[33] Akimasa Kinoshita;Motohiro Iwamia;Itsuo Nakanoa et al.A pn-SiC diode as a radiation detector[J].IEEE,2004,754(11):1346.
[34] Akimasa Kinoshita;Motohiro Iwami;Ken-ichi Kobayashi;Itsuo Nakano;Reisaburo Tanaka;Tomihiro Kamiya;Akihiko Ohi;Takeshi Ohshima;Yasutaka Fukushima .Radiation effect on pn-SiC diode as a detector[J].Nuclear Instruments and Methods in Physics Research, Section A. Accelerators, Spectrometers, Detectors and Associated Equipment,2005(1/2):213-220.
[35] Bruzzi M;Nava F;Pin S et al.High quality SiC applications in radiation dosimetry[J].Applied Surface Science,2001,184(07):425.
[36] Q.Zhang;V.Madangarli;M.Tarplee;T.S.Sudarshan .Comparison of Current-Voltage Characteristics of n- and p-Type 6H-SiC Schottky Diodes[J].Journal of Electronic Materials,2001(3):196-201.
[37] Nishijima T;Hearneb S M;Jamieson D N et al.Radiation damage on 6H-SiC Schottky diodes[J].Nucl Instrum Me-thods Phys Res,2003,B210(05):196.
[38] Luo Zhiyun;Chen Tianbing;Sutton Akil K et al.Proton radiation effects in 4H-SiC diodes and MOS capacitors[J].IEEE Transactions on Nuclear Science,2004,51(06):3748.
[39] Takeshi Ohshima;Hisayoshi Itoh;Masahito Yoshikawa .Effect of gamma-ray irradiation on the characteristics of 6H silicon carbide metal-oxide-semiconductor field effect transistor with hydrogen-annealed gate oxide[J].Journal of Applied Physics,2001(6):3038-3041.
[40] Takeaki Sakurai;Elder A. de Vasconcelos;Teruaki Katsube;Yasushiro Nishioka;Hikaru Kobayashi .SiC/SiO_(2) interface states observed by x-ray photoelectron spectroscopy measurements under bias[J].Applied physics letters,2001(1):96-98.
[41] Scozzie C.J.;McGarrity J.M. .Silicon carbide FETs for high temperature nuclear environments[J].IEEE Transactions on Nuclear Science,1996(3):1642-1648.
[42] Ivanov A M;StrokanN B;Davydov D V et al.Radiation hardness of SiC based ions detectors for influence of the re-lative protons[J].Applied Surface Science,2001,184(08):431.
[43] Lee Kin Kiong et al.Performance of gamma irradiated p-channel 6H-SiC MOSFETs:High total dose[J].IEEE Transactions on Nuclear Science,2003,50(01):194.
[44] 廖伟;罗小蓉;廖勇明.SiO2/6H-SiC界面的物理性质及其辐照特性的研究[J].四川大学学报(自然科学版),2001(38):48.
[45] 尚也淳,张义门,张玉明.中子辐照下的6H-SiC pn结电特性分析[J].半导体学报,2000(07):691-696.
[46] 尚也淳,张义门,张玉明.6H-SiC JFET 输出特性及其中子辐照模型[J].核电子学与测控技术,2000(06):424.
[47] 尚也淳,张义门,张玉明,刘忠立.6H-SiC MOS结构电特性及其辐照效应的研究[J].电子与信息学报,2003(03):389-394.
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