用第一原理理论研究了Au吸附于清洁及H化Si(001)表面的特性.结果表明,对于清洁表面,Au原子的吸附能够打断衬底Si层的二聚体化学键;在低温下,Au原子停留在表面,但由于具有较小的扩散势垒,比较容易扩散到Si衬底中.而Au原子在H-Si(001)表面的吸附则不会打破衬底Si二聚体键,这一点与清洁表面的吸附性质完全相反.
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