B-doped ZnO thin films were observed to have a lateral laser-induced photovoltaic effect: the saturation value varied very linearly with the 10.6 mu m constant laser spot position between the electrodes on the ZnO surface. It was found that the temperature gradient in the direction of electron transfer (along the film surface) due to the laser spot causes this photovoltage signal to be linearly dependent on the position of the laser spot in this isotropic system. This linearity is expected to make ZnO a candidate for position-sensitive photodetectors.
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