多晶硅薄膜的表面处理工艺

无机材料学报, 2001, 16(4): 693-696.

多晶硅薄膜的表面处理工艺

曾祥斌 , JohnnyKOSin , 徐重阳 , 饶瑞

2. 2. 香港科技大学电气与电子工程系

1.1.Department of Electronic Science and Technology Huazhong University of Science and Technology

Wuhan 430074

Chian

The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China

关键词： NH₃ , N₂O , surface passivation , poly-Si TFT

Surface Plasma Passivation of the Polycrystalline Silicon Thin Films by Using NH₃ or N₂O Gas

ZENG Xiang-Bin , Johnny K O Sin , XU Zhong-Yang , RAO Rui

Keywords： NH₃ , N₂O , 表面钝化 , p-Si TFT

采用ＮＨ_３和Ｎ_２Ｏ的等离子体分别对ｐ－Ｓｉ（多晶硅）薄膜表面进行了钝化处理，处理后的ｐ－ＳｉＴＦＴ（薄膜晶体管）具有比未处理ＴＦＴ更优越的性能，通电试验与热应力试验后，处理后的器件呈现出更好的承受电负荷和热应力能力，钝化的微观机理是ＮＨ_３和Ｎ_２Ｏ等离子体中和了ｐ－Ｓｉ薄膜的悬挂键，形成牢固的Ｓｉ－Ｎ键，减少了表面态密度．

The poly-Si thin film was passivated by using NH₃ or N₂O plasma before deposition of gate diode. The poly-Si TFTs fabricated with this process have better electrical characteristics than those of conventional poly-Si TFT without NH₃ or N₂O plasma passivation. These devices also have better hot-carrier endurance and thermal stability. Both the nitrogen pile-up at the SiO₂/poly-Si interface and the strong Si-N bond formation to terminate the dangling bonds at the grand boundaries of the poly-Si thin film in the channel region are the major causes.

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