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Al(x)In(1-x)N films with an AlN buffer were deposited on different substrates (including Si(1 1 1), sapphire, and glass) by radio-frequency (RF) magnetron sputtering at a low temperature of 300 degrees C. The morphology and structure analysis revealed that the Al(x)In(1-x)N films grown on Si(1 1 1) and sapphire are of high orientation and good crystallinity with a bandgap energy (E(g)) of less than 2.41 eV. The sheet resistance of Al(x)In(1-x)N film grown on Si(1 1 1) and sapphire is approximately 40 Omega/square. These results are highly relevant to the development of effective nitride photovoltaic materials. (C) 2009 Elsevier B.V. All rights reserved.