采用中频脉冲磁控溅射工艺制备ITO薄膜,研究了衬底温度和溅射功率对薄膜性能的影响.通过对二者的优化,获得了方阻为2.99Ω/□,电阻率为1.76×10-4Ω·cm,可见光波段(400~800 nm)平均透过率为82.3%的ITO薄膜.将优化后的薄膜用于电池上,制出了转化效率为14.04%的HIT太阳能电池.
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