在一维线性谐振子模型基础上,应用薛定谔方程分析了晶体中原子的概率分布;将晶体中原子的概率分布定义为原子云,解释了物理气相沉积法制备薄膜时残余应力产生的原因,建立了薄膜残余应力产生机理的理论模型.
参考文献
| [1] | Minoru A .[J].Thin Solid Films,2004,467:146-149. |
| [2] | Lin MJ;Chen RS .Effect of gradient residual stress on adhesion for a center-anchored circular plate and its underlying substrate[J].Sensors and Actuators, A. Physical,2004(1):109-117. |
| [3] | Hanabusa T;Kusaka K;Matsue T;Nishida M;Sakata O;Sato T .Evaluation of internal stresses in TiN thin films by synchrotron radiation[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2004(3/4):571-575. |
| [4] | Chew HB;Guo TF;Cheng L .Vapor pressure and residual stress effects on failure of an adhesive film[J].International Journal of Solids and Structures,2005(16/17):4795-4810. |
| [5] | Guo S;Dillard D A;Nairn J A .[J].International Journal of Adhesion and Adhesives,2006,26:285-294. |
| [6] | Qasmi M;Delobelle P;Richard F;Bosseboeuf A .Effect of the residual stress on the determination through nanoindentation technique of the Young's modulus of W thin film deposit on SiO2/Si substrate[J].Surface & Coatings Technology,2006(14/15):4185-4194. |
| [7] | Litteken C S;Strohband S;Dauskardt R H .[J].ACTA MATERIALIA,2005,53:1955-1961. |
| [8] | Li W L;Fei W D;Hanabusa T .[J].Applied Sueface Science,2006,252:2847-2852. |
| [9] | Hodge AM;Foreman R;Gallegos GF .Residual stress analysis in thick uranium films[J].Journal of Nuclear Materials: Materials Aspects of Fission and Fusion,2005(1/3):8-13. |
| [10] | Guisbiers G;Strehle S;Wautelet M .[J].Microelectronic Engineering,2005,82:665-669. |
| [11] | Pauleau Y .[J].Vacuum,2001,61:175-181. |
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