欢迎登录材料期刊网

材料期刊网

高级检索

以乙酰丙酮锌、乙酰丙酮铝为锌和铝的原料,乙醇和水为溶剂,采用超声喷雾热解法在玻璃衬底上制备了ZnO∶Al透明导电薄膜,研究了Al添加量为0%~20%(原子分数,下同)对ZnO∶Al薄膜光电性能的影响.使用XRD、SEM、DSC、FTIR、四探针、分光光度计对薄膜进行了表征和分析.结果表明,300℃的低温能生长出结晶态的薄膜,Al掺杂引起晶格常数减小;晶粒形貌为片状;随着Al添加量的增加,方块电阻先降低后增大,Al添加量为4.0%时具有最低的方块电阻(4.43 kΩ/sq),最佳的电阻率(0.43 Ω·cm);Al添加量对薄膜的透光率影响较小,平均可见光透光率大于80%.真空热处理可显著降低方块电阻,Al添加量为4.0%的薄膜经过550℃热处理后,其方块电阻降低到106 Ω/sq,相应的电阻率为1.0×10-2 Ω·cm.

参考文献

[1] Pearton S J;Norton D P;Ip K et al.Recent progress in processing and properties of ZnO[J].Progress in Material Science,2005,50:293.
[2] U. Ozgur;Ya. I. Alivov;C. Liu;A. Teke;M. A. Reshchikov;S. Dogan;V. Avrutin;S.-J. Cho;H. Morkoc .A comprehensive review of ZnO materials and devices[J].Journal of Applied Physics,2005(4)
[3] A. P. Chatterjee;P. Mitra .Chemically deposited zinc oxide thin film gas sensor[J].Journal of Materials Science,1999(17):4225-4231.
[4] Masayuki O;Kouji H;Mitsugu H .395-nm and 790-nm femtosecond laser ablation of aluminum-doped zinc oxide[J].Proceedings SPIE,2000,4088:25.
[5] Hua Li;Jianping Sang;Chang Liu;Hongbing Lu;Juncheng Cao .Microstructural study of MBE-grown ZnO film on GaN/sapphire (0001) substrate[J].Central European Journal of Physics,2008(3):638-642.
[6] Yang T L;Zhang D H;Ma J et al.Transparent conducting ZnO : Al films deposited on organic substrates deposited by r.f.magnetron-sputtering[J].THIN SOLID FILMS,1998,326(1-2):60.
[7] Haga K;Suzuki T;Kashiwaba Y et al.High-quality ZnO films prepared on Si wafers by low-pressure MO-CVD[J].THIN SOLID FILMS,2003,433(1-2):131.
[8] Dae-Hyun Kim;Eun-Kyung Jeong;In-Soo Kim et al.Properties of Al-doped ZnO thin films by E-beam evaporation[J].ECS Transactions,2007,11(05):277.
[9] Alam M J;Cameron D C .Preparation and properties of transparent conductive aluminum-doped zinc oxide thin films by sol-gel process[J].J Vacuum Sci Techn A,2001,19(04):1642.
[10] Wang MS;Kim EJ;Shin EW;Chung JS;Hahn SH;Park C .Low-temperature solution growth of high-quality ZnO thin films and solvent-dependent film texture[J].The journal of physical chemistry, C. Nanomaterials and interfaces,2008(6):1920-1924.
[11] Hou XH;Choy KL .Processing and applications of aerosol-assisted chemical vapor deposition[J].Chemical vapor deposition: CVD,2006(10):583-596.
[12] Islam MN.;Chopra KL.;Acharya HN.;Ghosh TB. .XPS AND X-RAY DIFFRACTION STUDIES OF ALUMINUM-DOPED ZINC OXIDE TRANSPARENT CONDUCTING FILMS[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1996(1/2):20-25.
[13] 徐自强;邓宏;谢娟 等.Al掺杂对ZnO薄膜性能的影响[J].四川大学学报(自然科学版),2005,42(增刊2):213.
[14] Chang Y;Lu H;Hung Y et al.A study on impact of process parameters to metal organic chemical vapor deposition grown (002) zinc oxide thin films,at 320 ℃[J].Mater Res Soc Symposium Proceedings,2003,744:M5.12.1.
[15] Selvan JAA;Delahoy AE;Guo SY;Li YM .A new light trapping TCO for nc-Si : H solar cells[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2006(18/19):3371-3376.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%