980 nm High Power Semiconductor Laser Stacked Arrays with Non-absorbing Window

材料科学技术（英文）, 2007, 23(1): 36-38.

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1.National Key Lab on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China

2.National Key Lab on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China

3.National Key Lab on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China

4.National Key Lab on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China

5.National Key Lab on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China

基金项目: National Key Lab for High Power Semiconjuctor Laser(05ZS3606;YJ0467037) 国家自然科学基金(60476026;60477010)

980 nm High Power Semiconductor Laser Stacked Arrays with Non-absorbing Window

Keywords： High power

980 nm InGaAs/GaAs separate confinement heterostructure (SCH) strained quantum well (QW) laser with non-absorbing facets was fabricated by using thermal treatment. Microchannel coolers with a five-layer thin oxygen-free copper plate structure were designed and fabricated through thermal bonding in hydrogen ambient.The highest CW (continuous wave) output power of 200 W for 5-bar arrays packaged by microchannel coolers was presented.

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980 nm High Power Semiconductor Laser Stacked Arrays with Non-absorbing Window

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