用瞬时蒸发法在加热到453 K的玻璃基体上沉积出了厚度在40-160nm的多晶Bi纳米薄膜.用X射线衍射(XRD)、场发射扫描电子显微术(FE-SEM)分析了薄膜的相结构和表面形貌.在300-350K研究了薄膜厚度与电阻率的关系,随着薄膜厚度增加,电阻率并不是单调减小;随着温度增加,电阻率减小.温度在300K时,Bi薄膜的电阻率在0.36-0.46mΩ·cm之间变化.随着薄膜厚度的增加,Seebeck系数增加.电子浓度、迁移率与薄膜厚度的关系表明薄膜的电输运性能随薄膜厚度的变化而波动.
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