The microstructure of as-received and post-annealed SiC whiskers were investigated by transmission electron microscopy. In the as-received SiC whiskers, the thinner beta-SiC parts were jointed with the one-dimensional disordered parts by {111}, twin boundaries. After annealing, beta-SiC parts became coarser than the one-dimensional disordered parts at 1900-degrees-C and then disappeared at 2000-degrees-C.
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