详细介绍了目前采用旋转涂覆(Spin-on deposition)法制备硅基多孔低k薄膜材料(MSQ及HSD)的方法及技术,其次介绍了用FTIR对低介电MSQ及HSQ薄膜的结构的分析,最后指出了等离子体处理对薄膜表面改性研究的主要进展以及存在的问题和今后的研究方向.
In this paper, the technology progrss in preparation of MSQ and HSQ silicon-based low dielectric constant thin film by SOD is introduced in detail. The structures of these films are identified by FTIR The technology progress in the surface modification by plasma treatment and research interests are pointed out.
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