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  4. 高能辐射室温探测器用TlBr单晶及其器件

材料导报, 2008, 22(8): 1-13.

高能辐射室温探测器用TlBr单晶及其器件

周东祥 1, , 余石金 2, , 胡云香 3, , 龚树萍 4, , 郑志平 5,

1.华中科技大学电子科学技术系教育部敏感陶瓷工程研究中心,武汉430074

2.华中科技大学电子科学技术系教育部敏感陶瓷工程研究中心,武汉430074

3.华中科技大学电子科学技术系教育部敏感陶瓷工程研究中心,武汉430074

4.华中科技大学电子科学技术系教育部敏感陶瓷工程研究中心,武汉430074

5.华中科技大学电子科学技术系教育部敏感陶瓷工程研究中心,武汉430074

基金项目:   国家自然科学基金(60676050)  

关键词： TlBr , 晶体生长 , 高能辐射 , 室温探测器

TIBr Single Crystal and Its Devices Used in High-energy Radiation Room-temperature Detectors

TlBr单晶材料具有探测器高的阻止本领、宽禁带、高电阻率、高密度、能量吸收深度较小等特点,是目前理想的高能X和7射线探测用半导体材料之一.介绍了TlBr单晶材料、TlBr探测器的基本原理以及T1Br单晶及器件的研究现状,概括了TlBr原料提纯和晶体生长的主要方法及其特点,同时总结归纳出TlBr晶体生长和器件制备方面所存在的高质量材料制备问题、电极接触问题、器件结构设计问题和载流子收集问题,以及将来TlBr探测器领域的热点研究方向.

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