采用CVD法,1 050℃在三维针刺C/C-SiC复合材料表面制备SiC涂层,研究稀释气体与载气流量比分别为4∶1和2∶1制备条件下涂层的晶体结构、表面和断面的微观形貌,对比了涂层前后C/C-SiC复合材料的抗烧蚀性能.结果表明:稀释气体流量降低其制备的SiC涂层更加平整致密,与基体结合程度更好,沉积产物均为单一的β-SiC结晶相.在600 s的氧化烧蚀下,两种流量比条件下制备CVD-SiC涂层的C/C-SiC复合材料的线烧蚀率比未涂层的分别降低34％和50％,质量烧蚀率分别降低70％和75％,抗氧化烧蚀性能明显提高.
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