通过PECVD法于不同温度直接沉积非晶硅(a-Si:H)薄膜,选择于850℃分别退火2h、3h、6h、8h.于700℃分别退火5h、7h、10h、13h,于900℃分别退火1h、3h、8h,分别于720℃、790℃、840℃、900℃、940℃退火1h,然后用拉曼光谱和SEM进行对比分析,发现退火温度与退火时间的影响是相互关联的,并且出现一系列晶化效果好的极值点.
Undoped amorphous silicon film is deposited by PECVD,and annealed at 850℃ for 2h,3h,6h,8h; 700℃ for 5h,7h,10h,13h;900℃ for 1h,3h,8h;720℃,790℃,840℃ ,900℃,940℃ for 1h respectively. The thin films are analyzed using micro-Raman scattering and scanning electron microscope. The results show that the relation between annealed temperature and annealed time, and there is some critical points.
参考文献
| [1] | Koch C.;Schubert M.;Ito M. .Low-temperature deposition of amorphous silicon solar cells[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2001(2):227-236. |
| [2] | 靳瑞敏 .中温制备多晶硅薄膜及相关理论问题的探讨[D].郑州大学,2006. |
| [3] | Wang Qiyuan;Zan Yude;Wang Jianhua et al.Comparison of properties of solid phase epitaxial silicon on sapphire films recrystallized by rapid tyermal annealing and furnace annealing[J].Materials Science and Engineering,1995,B29:43. |
| [4] | JIN Rui-min;LU Jing-xiao;LI Rui;WANG Hai-yan;FENG Tuan-hui .Solid-phase Crystallization of Amorphous Silicon Films by Rapid Thermal Annealing[J].Semiconductor photonics and technology,2005(1):37-39. |
| [5] | Jin RM;Lu JX;Ja Y;Yang S;Zhang LW .Quantum states in fabricating poly-Si films[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2006(23):8258-8260. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%