利用SEM和XRD研究了无磁场和2 T~10 T强磁场中电流密度和磁感应强度对铜电沉积层表面形貌及择优取向的影响.结果表明:无磁场下,表面晶粒随电流密度增加而增大,同时伴随氢气析出而导致气孔出现,施加10 T磁场后,表面晶粒随电流密度增加呈分裂细化趋势,同时氢气析出被抑制.强磁场施加使(220)晶面织构得到抑制,而(111),(200),(311)等晶面的织构得到增强,但无论是否施加磁场,在200A/m2~630A/m2的电流密度下,铜电沉积层仍保持(220)的优先生长方向.
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