研究了高能粒子辐照对InGaN材料的电子浓度变化和PL光谱强度在不同温度下变化的影响.高能粒子辐照使InGaN材料的电子浓度明显增加,表明辐照损伤在InGaN材料中产生的本征点缺陷主要是类施主点缺陷,高能粒子辐照产生的高浓度本征点缺陷最终将缺陷的Fermi能稳定在EFs处.在低温和室温条件下,InGaN材料的PL光谱随高能粒子辐照剂量的增加而变宽,且PL峰能向高能方向偏移.InGaN材料的PL光谱随辐照剂量的增加而变宽,原因是该材料中电子浓度的增加以及k选择的紊乱.研究结果表明,与一般的太阳能电池材料GaAs和GaInP相比,InGaN材料具有非常优越的抗辐照性能.
参考文献
| [1] | Wu J.;Walukiewicz W.;Shan W.;Yu KM.;Ager JW.;Haller EE.;Lu H. Schaff WJ. .Effects of the narrow band gap on the properties of InN - art. no. 201403[J].Physical review, B. Condensed matter and materials physics,2002(20):1403-0. |
| [2] | Wu J;Walukiewicz W;Yu K M et al.Superior radiation resistance of In1-xGaxN alloys:A full-solar spectrum photovoltaic materials system[J].Journal of Applied Physics,2003,94:6477. |
| [3] | O'Leary SK.;Shur MS.;Bhapkar UV.;Eastman LF.;Foutz BE. .Electron transport in wurtzite indium nitride[J].Journal of Applied Physics,1998(2):826-829. |
| [4] | Bertness K.A.;Friedman D.J.;Kurtz S.R.;Kibbler A.E.;Kramer C.;Olson J.M. .High-efficiency GaInP/GaAs tandem solar cells[J].IEEE Aerospace and Electronic Systems Magazine,1994(12):12-17. |
| [5] | Stampfl C;Van De Walle C G;Voggel D et al.Native defects and impurities in InN:First-principles studies using the local-density approximation and self-interaction and relaxation-corrected pseudo-potentials[J].Physical Review B:Condensed Matter,2000,61(12):R7846. |
| [6] | Messenger S R;Summers G P;Burke E A et al.Modeling solar cell degradation in space:A comparison of the NRL displacement damage dos(e)and the JPL equivalent influence approaches[J].Prog Photovoltaics:Res Appl,2001,9(02):103. |
| [7] | Walukiewicz W. .Intrinsic limitations to the doping of wide-gap semiconductors[J].Physica, B. Condensed Matter,2001(0):123-134. |
| [8] | S. X. Li;K. M. Yu;J. Wu;R. E. Jones;W. Walukiewicz;J. W. Ager III;W. Shan;E. E. Haller;Hai Lu;William J. Schaff .Fermi-level stabilization energy in group Ⅲ nitrides[J].Physical review, B. Condensed matter and materials physics,2005(16):161201.1-161201.4. |
| [9] | Zawadzki W;Szyamańska W .Elastic electron scattering in InSb-type semiconductors[J].Physical Status Solidi B Basic Research,1971,45(02):415. |
| [10] | Vurgaftman I.;Ram-Mohan LR.;Meyer JR. .Band parameters for III-V compound semiconductors and their alloys [Review][J].Journal of Applied Physics,2001(11 Pt.1):5815-5875. |
| [11] | Zhang Z;Zhang R;Liu B;Xie ZL;Xiu XQ;Han R;Lu H;Zheng YD;Chen YH;Tang CG .Circular photogalvanic effect at inter-band excitation in InN[J].Solid State Communications,2008(4):159-162. |
| [12] | B. Arnaudov;T. Paskova;P. P. Paskov;B. Magnusson;E. Valcheva;B. Monemar;H. Lu;W. J. Schaff;H. Amano;I. Akasaki .Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels[J].Physical Review.B.Condensed Matter,2004(11):115216.1-115216.5. |
| [13] | Blood P .Capacitance-voltage profiling and the characterization of Ⅲ-V semiconductors using electrolyte barriers[J].Semiconductor Sci Techn,1986,1:7. |
| [14] | Arulkumaran S;Egawa T;Zhao G Y et al.Electrical characteristics of schottky contacts on GaN and A10.11-Ga0.89 N[J].Japan J Appl Phys Part 2,2000,39(4B):L351. |
| [15] | S. X. Li;R. E. Jones;E. E. Haller;K. M. Yu;W. Walukiewicz;J. W. Ager;Z. Liliental-Weber;Hai Lu;William J. Schaff .Photoluminescence of energetic particle-irradiated In_(x)Ga_(1-x)N alloys[J].Applied physics letters,2006(15):151101-1-151101-3-0. |
| [16] | Nolte D D .Surface recombination,free-carrier saturation,and dangling bonds in InP and GaAs[J].Solid-State Electronics,1990,33(02):295. |
| [17] | K.S.A. Butcher;T.L. Tansley .InN, latest development and a review of the band-gap controversy[J].Superlattices and microstructures,2005(1):1-37. |
| [18] | Li SX;Haller EE;Yu KM;Walukiewicz W;Ager JW;Wu J;Shan W;Lu H;Schaff WJ .Effect of native defects on optical properties of InxGa1-xN alloys[J].Applied physics letters,2005(16):1905-1-1905-3-0. |
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