Complex Permittivity and Microwave Absorbing Property of Si3N4-SiC Composite Ceramic

材料科学技术（英文）, 2012, 28(8): 745-750.

Complex Permittivity and Microwave Absorbing Property of Si3N4-SiC Composite Ceramic

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1.Science and Technology on Thermostructure Composite Materials Laboratory, Northwestern Polytechnical University,Xi＇an 710072, China

2.Science and Technology on Thermostructure Composite Materials Laboratory, Northwestern Polytechnical University,Xi＇an 710072, China

3.Science and Technology on Thermostructure Composite Materials Laboratory, Northwestern Polytechnical University,Xi＇an 710072, China

4.Science and Technology on Thermostructure Composite Materials Laboratory, Northwestern Polytechnical University,Xi＇an 710072, China

5.Science and Technology on Thermostructure Composite Materials Laboratory, Northwestern Polytechnical University,Xi＇an 710072, China

基金项目: Acknowledgements The authors gratefully acknowledge the financial support from the National University Student Innovation Program fund (No. 101069911). This work was also supported by the Research Fund of State Key Laboratory of Solidification Processing in Northwestern Polytechnical University(KB200920) the China Postdoctoral Science Foundation(20110491683) the 111 Project(B0S040)

关键词： Si3N4-SiC , 复合陶瓷 , 复介电常数 , 吸波性能 , 平均晶粒尺寸 , 相对介电常数 , 碳化硅陶瓷 , 化学气相渗透

Complex Permittivity and Microwave Absorbing Property of Si3N4-SiC Composite Ceramic

Keywords： SiC , Si3N4 , Dielectric properties , Reflection loss ,

Si3N4-SiC composite ceramics were fabricated by chemical vapor infiltration using porous Si3Na ceramic as preform. The average grain size of SiC was 30 nm. Relationship between SiC content and relative complex permittivity of Si3Na-SiC within the frequency range of 8.2-12.4 GHz （X-band） was investigated. The average real part of relative complex permittivity ε′ of Si3N4-SiC increased from 3.7 to 14.9 and the relative imaginary part ε″ increased from 0.017 to 13.4 when the content of SiC increased from 0 to 10 vol.%. The Si3N4-SiC ceramic with 3 vol.% SiC achieved a reflection loss below -10 dB （90% absorption） at 8.0-11.4 GHz, and the minimum value was -27.1 dB at 9.8 GHz when the sample thickness was 2.5 mm. The excellent microwave absorbing abilities of Si3N4-SiC ceramic were attributed to the interfacial polarization at interface between Si3N4 and SiC and at grain boundary between SiC nanocrystals.

参考文献

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Complex Permittivity and Microwave Absorbing Property of Si3N4-SiC Composite Ceramic

Complex Permittivity and Microwave Absorbing Property of Si3N4-SiC Composite Ceramic

参考文献