通过简单化学气相反应法,在1300℃下合成出大量SiC纳米棒产物,着重研究了Fe催化条件下该SiC纳米棒的生长机制.采用数码相机、立式显微镜、场发射扫描电镜、能谱分析仪、透射电镜、选区电子衍射仪、高分辨透射电镜及X射线粉末衍射仪对产物的宏观产量、微观形貌、化学成分及晶体结构进行了表征.结果表明,石墨基片上生成1层较厚的浅蓝色产物,产量达克量级,产物由均匀的纳米棒组成,直径约100nm,长达几微米,具有立方β-SiC晶体结构.基于Fe-C-Si三元合金相变原理及传统的VLS机制,首次提出一种周期性的气-液-固(Periodic-VLS)生长模型对SiC纳米棒的形成过程进行了详细讨论.
参考文献
[1] | Xi G C;Yu S J;Zhang R et al.[J].Journal of Physical Chemistry B,2005,109:13200. |
[2] | Fisher A;Schroter;Richter B W .[J].Applied Physics Letters,1995,66(23):3182. |
[3] | Niu J J;Wang J N .[J].Journal of Physical Chemistry B,2007,111:4368. |
[4] | Luthra K L .[J].Journal of the American Chemical Society,1998,71:1114. |
[5] | Lao C;Li Y;Wong C P et al.[J].Nano Letters,2007,7:27. |
[6] | Yang W;Araki H;Thaveethavorn S;Suzuki H;Noda T .In situ synthesis and characterization of pure SiC nanowires on silicon wafer[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2005(1/2):236-240. |
[7] | Chiu S C;Huang C W;Li Y Y .[J].Journal of Physical Chemistry C,2007,111:10294. |
[8] | Shin Y;Wang C M;Samuels W D .[J].Materials Letters,2007,61:2814. |
[9] | Xi G C;Peng Y Y;Wan S M et al.[J].Journal of Physical Chemistry B,2004,108:20102. |
[10] | Meng A L;Li Z J;Zhang J L et al.[J].Journal of Crystal Growth,2007,308:263. |
[11] | Li F;Wen G .A novel method for massive fabrication of beta-SiC nanowires[J].Journal of Materials Science,2007(12):4125-4130. |
[12] | Wagner R S;Ellis W C .[J].Applied Physics Letters,1964,4:89. |
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