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通过简单化学气相反应法,在1300℃下合成出大量SiC纳米棒产物,着重研究了Fe催化条件下该SiC纳米棒的生长机制.采用数码相机、立式显微镜、场发射扫描电镜、能谱分析仪、透射电镜、选区电子衍射仪、高分辨透射电镜及X射线粉末衍射仪对产物的宏观产量、微观形貌、化学成分及晶体结构进行了表征.结果表明,石墨基片上生成1层较厚的浅蓝色产物,产量达克量级,产物由均匀的纳米棒组成,直径约100nm,长达几微米,具有立方β-SiC晶体结构.基于Fe-C-Si三元合金相变原理及传统的VLS机制,首次提出一种周期性的气-液-固(Periodic-VLS)生长模型对SiC纳米棒的形成过程进行了详细讨论.

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