以Al、TiN、B_4C、Si为原材料,采用自蔓延高温合成热等静压(SHS/HIP)技术制备了AlN-TiN-TiB_2复相导电陶瓷,测定其相对密度、维氏硬度、抗弯强度和断裂韧度等力学性能,并确定了最佳原料比.利用XRD、SEM分析了AlN-TiN-TiB_2复相导电陶瓷的物相和显微组织,材料的断裂模式主要是沿晶断裂.并且研究了不同比例复相陶瓷在不同温度下的电阻率.
AlN-TiN-TiB_2 composite conductive ceramics from powder mixtures of Al, TiN, B_4C and Si were fabricated by self-propagating high temperature synthesis (SHS) and hot isostatic pressing (HIP). The compositions and morphologies of the combustion product were studied by XRD and SEM. The fracture mode of SHS/HIP sintered AlN-TiN-TiB_2 composite conductive ceramics belongs to brittle intercrystalline fracture. The temperature-dependence and composition-dependence of the electrical resistivity of AlN-TiN-TiB_2 ceramics were studied. The electrical resistivity was 100～3000 μΩ·cm.
参考文献
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