Amorphous Si_(1-x)Sn_x alloys have been prepared by co-evaporation onto substrates maintained at liquid nitrogen temperature. Their atomic structure is investigated using density measurements, scanning high-energy electron diffraction and Mossbauer spectroscopy. The optical and electrical properties are reported. Then, a method to hydrogenate the films during the evaporation process is described and applied to the preparation of amorphous semiconductors from pure silicon to pure tin. Finally, multilayers of type Si / Si:H / ... or Si:H / Si:D / ... are studied. The modulation of hydrogen is shown by low-angle neutron scattering and measurements of hydrogen diffusivity are presented.
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