SPS法制备n-型Ag掺杂四元Ag-Bi-Se-Te 合金及其热电性能

稀有金属材料与工程, 2008, 37(2): 334-337.

SPS法制备n-型Ag掺杂四元Ag-Bi-Se-Te 合金及其热电性能

修伟杰 ^1, , 应鹏展 ^2, , 崔教林 ^3, , 薛海峰 ^4,

1.中国矿业大学,江苏,徐州221008;宁波工程学院,浙江,宁波315016

2.中国矿业大学,江苏,徐州221008

3.宁波工程学院,浙江,宁波315016

4.中国矿业大学,江苏,徐州221008;宁波工程学院,浙江,宁波315016

基金项目: 浙江省自然科学基金(Y404321) 浙江省宁波市博士学科点专项科研基金(2006A610058)

关键词：四元n-型Ag-Bi-Se-Te合金 , Ag掺杂 , 放电等离子烧结(SPS) , 电学性能

Electrical Properties of n-type Ag-doped Quaternary Ag-Bi-Se-Te Alloys Prepared by Spark Plasma Sintering

采用放电等离子烧结(SPS)方法制备Ag掺杂四元Ag-Bi-Se-Te合金,并分析研究其热电性能.结果表明:掺杂Ag后,合金AgxBi(2-x)Se0.3Te2.7(x=0.005～0.04)的Seebeck系数均为负值,说明材料属于n-型半导体;当温度大约在428.0K时,x=0.04合金的Seebeck系数绝对值(|a|)出现最大值,其值为1.80×10-4V·K-1,比三元合金Bi2Se0.3Te2.7的最大值增大约16%;材料电导率随Ag含量的增加而下降.如果采用相同方法制备且成分按(Bi2Te3)0.9-(Bi2-xAgxSe3)0.1(x=0～0.4)设计的材料热扩散系数进行估算,当温度在477.0 K时,合金AgxBi(2-x)Se0.3Te2.7(x=0.04)的ZT值出现最大值,其值为0.75,比典型三元合金Bi2Se0.3Te2.7的最大值增大约0.09.

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