High quality and large-sized Rb0.3MoO3 single crystals were synthesized by molten salt electrolysis method. X-ray diffraction (XRD) patterns and rocking curves, as well as the white beam Laue diffraction of X-ray images show the crystals grown by this method have high quality. The lattice constants evaluated from XRD patterns are a(0) = 1.87 nm, b(0) = 0.75 nm, c(0) = 1.00 nm, β = 118.83(°). The in situ selected area electron diffraction (SAED) patterns along the [10(1) over bar], [1 (11) over bar] and [10(3) over bar] zone axes at room temperature indicate that the Rb0.3MoO3 crystal possess perfect C-centered symmetry. Temperature dependence of the resistivity shows this compound undergoes a metal to semiconductor transition at 183 K. © 2005 Elsevier Inc. All rights reserved.
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