采用直接合成方法无法得到纯相的碲镓锂( LiGaTe2)多晶原料,因此提出了两步合成法进行LiGaTe2多晶原料合成,即先合成二元相Ga2Te3,再以Ga2Te3、Li、Te为原料按化学计量比配料在较低温度(850℃)下合成纯相的碲镓锂多晶料,并对具体的反应机理进行了讨论.对所得碲镓锂多晶料进行了XRD分析,结果显示合成的多晶为单相高纯LiGaTe2.差示扫描量热分析(DSC)表明,LiGaTe2的熔点为674.78℃.初步开展了LiGaTe2晶体的生长研究,对晶体生长结果进行了探讨.
参考文献
[1] | Shay J L;Wernick J H.Ternary Chalcopyrite Semiconductors:Growth,Electronic Properties and Applications[M].New York:Pergamon Press,1975 |
[2] | Buehler E;Shay J L .The Melt Growth and Doping of CdGeAs2[J].Journal of Electronic Materials,1973,2(04):601. |
[3] | Isaenko L;Krinitsin P;Vedenyapin V;Yelisseyev A;Merkulov A;Zondy JJ;Petrov V .LiGaTe2: A new highly nonlinear chalcopyrite optical crystal for the mid-IR[J].Crystal growth & design,2005(4):1325-1329. |
[4] | Bruckner J .Ⅰ-Ⅲ-Ⅵ-Verbindungshalbleiter Mit Lithium Als Gruppe Ⅰ-element:Kristallzuchtung und Charakterisierung[D].Dissertation,AlbertLudwigs-Universitat,Freiburg i.Br.,Germany,1997. |
[5] | Petrov V;Isaenko L;Yelisseyev A;Krinitsin P;Vedenyapin V;Merkulov A;Zondy JJ .Growth and characterization of the chalcopyrite LiGaTe2: A highly non-linear birefringent optical crystal for the mid-infrared[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,2006(23/25):2434-2438. |
[6] | Jean-Jacques Zondy;Franck Bielsa;Albane Douillet;Laurent Hilico;Ouali Acef;Valentin Petrov;Alexander Yelisseyev;Ludmila Isaenko;Pavel Krinitsin .Frequency doubling of CO_(2) laser radiation at 10.6 (mu)m in the highly nonlinear chalcopyrite LiGaTe_(2)[J].Optics Letters,2007(12):1722-1724. |
[7] | 王善朋,陶绪堂,董春明,焦正波,蒋民华.加速坩埚旋转下降技术生长LiInS2晶体[J].人工晶体学报,2007(01):8-13. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%