研究了基本工艺参数对磁控溅射制备无定形氮化碳（ａ－ＣＮx）薄膜沉积的影响．实验结果表明：Ｎ２流量的增加提高了膜的沉积速率，同时提高了膜中氮含量．溅射功率的提高增加了沉积速率．偏压对硬质膜的制备是一关键的工艺参数，它不仅使薄膜致密、表面光滑，而且还可以提高膜中的Ｎ含量．
The influence of basic processing parameters on the deposition of a-CNx was studied.The results show that the increase of N flux enhances the deposition rate of the film as well asincreases its N content. While higher sputtering power leads to higher deposition rate. Further-more, the employment of bias will prove to be beneficial in the preparation of CNx film in thatit not only facilitates the densification process and produces a smoother surface morphology, butalso increases the content of N in the film.
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