研究了用简单铜盐通过阴极还原氧化亚铜的电化学行为,讨论了一些工艺因素对 在导电玻片上电沉积Cu2O薄膜的影响,并对所制备的Cu2O薄膜分别用台阶仪、X射线 衍射仪(XRD)、扫描电镜(SEM)、X射线光电子能谱(XPS)进行表征.得到的较佳工艺 条件为:电势-0.22--0.45V(vs SCE),温度为60℃,pH值为5.5-6.0,(CH3COO)2Cu浓度为 0.015-0.04mol／L.表征结果发现,随池温的升高,晶粒尺寸从0.2μm增加到0.4μm,60℃沉积 的Cu2O薄膜开始具有(111)面择优取向,Cu2O膜纯度高,薄膜表面呈网络多孔结构.
Electrochemical behavior of cuprous oxide was investigated by using the catholic reduction electrochemical method. The effects of some technological factors on Cu2O thin films electrodeposited
on transparent conducting glass were also studied. Cu2O thin films were characterized by Talystep, X-ray diffraction (XRD) , scanning electron microscope (SEM) and X-ray photoelectron spectroscope
(XPS). The optimum technological conditions were obtained as follows: the applied potential was -0.22～-0.45V (vs SCE) , bath temperature was 60℃, bath pH was 5.5～6.0 and concentration of (CH3COO)2Cu
was in the range 0.015～0.040mol/L. The results showed that with the increase of bath temperature, the grain size of Cu2O film increased from 0.2μm to 0.4μm and it started to have (111) preferred
orientation at 60℃. The film had high purity and was porous.
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