利用三维器件模拟软件,研究了深亚微米三栅FinFET的短沟道效应,并模拟了阈值电压和亚阈值摆幅随硅鳍(fin)厚度和高度的变化情况.通过优化硅鳍厚度或高度,可以有效的控制短沟道效应.在进一步对深亚微米三栅FinFET的拐角效应进行二维数值模拟的过程中,并未观察到由拐角效应引起的泄漏电流.与传统的体硅CMOS结构有所不同,拐角效应并未使得深亚微米三栅FinFET性能变差,反而提高了其电学性能.
参考文献
| [1] | Weida Hu;Xiaoshuang Chen;Xuchang Zhou;Zhijue Quan;Lu Wei .Quantum-mechanical effects and gate leakage current of nanoscale n-type FinFETs: A 2d simulation study[J].Microelectronics journal,2006(7):613-619. |
| [2] | 张盛东.三维结构MOS晶体管技术研究[M].北京:高等教育出版社,2005 |
| [3] | 杨宇,毛旭,杨红卫,周卫,周桢来,刘焕林,王迅.Optical Absorption in SiGe/Si Quantum Well Structures Created by Subband Transitions[J].中国物理快报(英文版),2001(12):1655-1657. |
| [4] | 邵雪,余志平.一种基于非平衡态格林函数的准三维FinFET模型[J].半导体学报,2005(06):1191-1196. |
| [5] | Hamdy Abd El Hamid;Jaume Roig Guitart;Valeria Kilchytska;Denis Flandre;Benjamin Iniguez .A 3-D Analytical Physically Based Model for the Subthreshold Swing in Undoped Trigate FinFETs[J].IEEE Transactions on Electron Devices,2007(9):2487-2496. |
| [6] | Abhinav Kranti;G Alastair Armstrong .Performance assessment of nanoscale double- and triple-gate FinFETs[J].Semiconductor Science and Technology,2006(4):409-421. |
| [7] | Jagar S;Singh N;Mehta SS;Agrawal N;Samudra G;Balasubramanian N .A FinFET and Tri-gate MOSFET's channel structure patterning and its influence on the device performance[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2004(0):1-5. |
| [8] | Kathawala G A;Mohamed M;Ravaioli U .[J].Journal of Computational Electronics,2003,2:85-89. |
| [9] | Abhisek Dixit;Anil Kottantharayil;Nadine Collaert;Mike Goodwin;Malgorzata Jurczak;Kristin De Meyer .Analysis of the Parasitic S/D Resistance in Multiple-Gate FETs[J].IEEE Transactions on Electron Devices,2005(6):1132-1140. |
| [10] | Choi Y K;King T J;Hu C M .[J].Solid-State Electronics,2002,23(01):1595-1601. |
| [11] | Jin Y W;Zeng C;Ma L et al.[J].Solid-State Electronics,2007,53(03):347-353. |
| [12] | 王茺,刘昭麟,刘俊明,陈雪梅,崔昊杨,夏长生,杨宇,陆卫.氧非正分La0.9Ba0.1MnO3-δ/SrTiO3：Nb p-n异质结的整流特性研究[J].物理学报,2008(01):502-507. |
| [13] | Hu WD;Chen X S;Quan Z J et al.[J].Journal of Applied Physics,2007,102:034502. |
| [14] | 全知觉 .碲镉汞红外探测器的性能分析研究[D].中国科学院上海技术物理研究所,2007. |
| [15] | Gen Pei;Jakub Kedzierski;Phil Oldiges;Meikei Ieong;Edwin Chih-Chuan Kan .FinFET design considerations based on 3-D simulation and analytical modeling[J].IEEE Transactions on Electron Devices,2002(8):1411-1419. |
| [16] | 胡伟达 .半导体场效应晶体管器件的量子和热电子效应的研究[D].中国科学院上海技术物理研究所,2007. |
| [17] | Hu W D;Chen X S;Quan Z J et al.[J].Journal of Applied Physics,2006,100:074501. |
| [18] | Burenkcv A;Lorenz J .[J].European Solid State Device Research,2003,23(04):135-138. |
| [19] | J. G. Possum;J.-W. Yang;V. P. Trivedi .Suppression of Corner Effects in Triple-Gate MOSFETs[J].IEEE Electron Device Letters,2003(12):745-747. |
| [20] | Colinge;Pierre J.FinFETs and Other Multi-gate Transistors[M].US:Springer,2008:26-28. |
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