采用金属有机化学汽相沉积(MOCVD)的方法生长出高质量的InGaN合金薄膜,并对InGaN合金薄膜的光电性能进行高能粒子辐照损伤测试,用室温下的光致发光对InGaN合金薄膜的少数载流子寿命进行间接测量,结果显示,高In组分InGaN合金薄膜具有很好的晶体结构质量,其位错密度均没有超过5×1010cm-2.在辐照损伤强度超过常用太阳能电池材料GaAs和GaInP损伤强度极限2个数量级以上时,InGaN合金仍然具有良好的光电性能,说明InGaN合金是非常适合制作抗超高辐照强度的太阳能电池材料.研究分析表明,InGaN合金具有较高的抗辐照性能是由这种材料的本质属性决定的.
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