利用MeVVA离子源技术对阴极磁过滤真空弧沉积的TiAlN薄膜进行了不同注入剂量的Nb及Nb+C离子注入。采用EDS、TEM、GIXRD、显微硬度等测试方法研究了离子注入剂量对于薄膜微观结构和性能的影响。结果表明，注入剂量为Nb5×1017 ions/cm2+C5×1017 ions/cm2时，Nb在TiAlN薄膜内的注入投影射程为130nm；在薄膜表层形成厚度约50nm的非晶与纳米晶的复合结构；在次表层，晶粒发生局部扭曲变形。随着离子注入剂量的增加，薄膜与基底的复合硬度由HV1900增加到HV3000，在高剂量离子注入条件下，薄膜的硬度提升更为显著。
TiAlN films were deposited by magnetic filtering vacuum arc deposition, on which Nb and Nb+C ion implantation of different doses were prepared by MeVVA ion source. The effects of ion implantation doses on the properties and microstructure of TiAlN films were studied with helps of EDS, TEM, GIXRD, micro-hardness measurement. The results indicated that the projected range of Nb into TiAlN film was about 130nm with the implantation dose Nb+C(5×1017 ions/cm2+5×1017 ions/cm2). In the surface area of the film, amorphous and nano-crystalline composite structure about 50nm thick was found. In the subsurface, local grain distortion occurred. With the increase of implantation dose, the composite hardness of film and substrate increased from HV1900 to HV3000. Hardness will increase more significant at even higher dose of implantation.
参考文献
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%