甲烷流量对中频磁控溅射制备TiSi-C:H薄膜生长和性能的影响

稀有金属材料与工程, 2014, 43(10): 2305-2310.

甲烷流量对中频磁控溅射制备TiSi-C:H薄膜生长和性能的影响

姜金龙 ^1, , 陈娣 ^2, , 王琼 ^3, , 黄浩 ^4, , 朱维君 ^5, , 郝俊英 ^6,

1.兰州理工大学,甘肃兰州730050;中国科学研究院兰州化学物理研究所固体润滑国家重点实验室,甘肃兰州730000

2.兰州理工大学,甘肃兰州730050

3.兰州理工大学,甘肃兰州730050

4.兰州理工大学,甘肃兰州730050

5.兰州理工大学,甘肃兰州730050

6.中国科学研究院兰州化学物理研究所固体润滑国家重点实验室,甘肃兰州730000

基金项目: Excellent Young Teachers Program of Lanzhou University of Technology (1010ZCX010) Natural Science Foundation of Gansu Province (1014RJZA007) National Natural Science Foundation of China (51105186) the Doctoral Research Grant of Lanzhou University of Technology

关键词： a-C:H薄膜 , 中频磁控溅射 , 力学性能 , 摩擦性能

Effect of Methane Flow Rate on Growth and Properties of TiSi-C:H Films Deposited by Middle-frequency Magnetron Sputtering

Keywords： a-C:H films , middle-frequency magnetron sputtering , mechanical property , tribological property

以甲烷为先驱气体通过中频磁控溅射Ti80Si20靶材在硅和不锈钢基底上制备TiSi-C:H薄膜,研究了甲烷流量对薄膜沉积速率、结构、力学和摩擦学性能的影响.结果表明,甲烷流量对薄膜结构、力学和摩擦学性能有显著影响,随甲烷流量增加薄膜从包含约10nm晶的锥状纳米晶/非晶复合结构向非晶结构转变,在低甲烷流量下沉积的薄膜具有高硬度、高应力和高磨损率;在高甲烷流量下薄膜硬度和应力降低,而摩擦学性能提高.薄膜力学和摩擦学性能的变化被认为是随甲烷流量增加薄膜结构演化的结果.

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