在不同的沉积温度下,用射频反应磁控溅射的方法在Si(100)衬底和Cu膜间制备了Zr-N阻挡层.用四探针电阻测试仪(FPP)、AFM、XRD、AES研究了沉积温度对Zr-N薄膜扩散阻挡性能的影响.沉积态的XRD、AFM结果表明,随着沉积温度的升高,Zr-N薄膜的结构由非晶态向晶态转变,晶粒的尺寸增大;650℃退火后的FPP、XRD、AES的对比结果说明沉积温度的升高有利于提高Zr-N薄膜的扩散阻挡性能.
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