在氧气和氩气的混合气体中,在O2/Ar混和气总流量固定的条件下,通过调节O2/Ar流量比,采用反应RF磁控溅射法制备了具有高介电常数的氧化锆薄膜.通过透射电子显微镜(TEM)和原子力显微镜(AFM)研究了O2/Ar流量比与薄膜微观组织和结构、表面平整度之间的关系,并测试分析了在不同O2/Ar流量比下溅射沉积的Al/ZrO2/SiO2/n型Si叠层结构的G-V特性曲线.实验结果表明O2/Ar流量比与薄膜微观组织和结构有一定的关系.纯氧气氛下沉积的ZrO2薄膜基本上为纳米级的微晶,晶体结构为单斜结构(a=5.17、b=5.26、c=5.3、α=y=90°,β=80.17°),在O2/Ar流量比为1 : 4混合气氛下制备出了具有非晶结构的均质ZrO2薄膜;低的O2/Ar流量比下溅射得到的ZrO2薄膜样片,均方根粗糙度较低,表面平整度较好;在O2/Ar流量比为1 : 4左右时,ZrO2薄膜的相对介电常数达到25.
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