采用真空蒸发的方法将有机电双稳材料PAR制成Al/PAR/Al夹层结构.详细研究了薄膜厚度、电极面积、退火处理和自然放置等因素对薄膜电性能的影响.结果表明,采用适当的工艺,能够获得性质均匀、电特性良好的电双稳薄膜(转变电压的分散性小于10%,延迟时间基本小于5μs,转变时间在20ns左右).Al/PAR/Al结构可以简单等效为电阻与电容的并联,而退火与自然放置将使薄膜结构趋于稳定.
参考文献
[1] | Potember R S;Poehler T O;Cowan D O .[J].Applied Physics Letters,1979,34:405. |
[2] | Potember R S;Poehler T O;Benson R C .[J].Applied Physics Letters,1982,41:548. |
[3] | Potember R S;Poehler T O;Rappa A et al.[J].Synthetic Metals,1982,4:371. |
[4] | Sato C;Wakamatsu S;Tadokoro K et al.[J].Journal of Applied Physics,1990,68:6536. |
[5] | Yamaguchi S;Viands C A;Potember R S .[J].Journal of Vacuum Science and Technology B:Microelectronics and Nanometer Structures,1991,9:1129. |
[6] | Hua Z Y;Chen G R .[J].Vacuum,1992,43:1019. |
[7] | Sun SQ.;Zhu DB.;Wu PJ. .THE PREPARATION, CHARACTERIZATION OF AMORPHOUS CU-TCNQ FILM WITH A LOW DEGREE OF CHARGE-TRANSFER (DCT) AND ITS ELECTRIC SWITCHING PROPERTIES[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1997(1/2):192-196. |
[8] | Iwasa Y;Koda T;Tokura Y et al.[J].Applied Physics Letters,1989,55:2111. |
[9] | Xu W;Chen G R;Li R J et al.[J].Applied Physics Letters,1995,67:2241. |
[10] | 陈国荣,彭建军,陈殿勇.单一有机材料PAN的电双稳特性及其应用[J].真空科学与技术学报,1999(06):403. |
[11] | 华中一,陈殿勇,蒋益明,莫晓亮,彭建军,陈国荣,潘星龙,章壮健.超快速高可靠过电压保护器[J].仪器仪表学报,2000(06):557-559. |
[12] | Hua ZY.;Xu W.;Chen DY.;Chen GR. .New organic bistable films for ultrafast electric memories[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2001(0):447-451. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%