电化学阳极氧化条件对多孔硅孔排列的规整度有着显著的影响.提出了一种不需阳极氧化铝模板或预图案化而直接制备近规整多孔硅的电化学方法,分析了氧化时间、电解液组成、HF浓度对多孔硅形态的影响.结果表明,随着阳极氧化时间的增加,多孔硅孔的深度逐渐加大,孔径则呈先增大后稳定的趋势.当氢氟酸(40%)与N-N-二甲基甲酰胺(DMF)的质量分数为20:80、电流密度为75mA/cm2、氧化时间为5min时,形成的多孔硅具有近规整的孔排列.形成的孔相互之间平行且垂直于样品表面,孔尺寸均匀一致,孔径在1μm左右,孔深度大约为20μm.
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