测试了硫酸盐还原菌（sulfate reducing bacteria， SRB）的生长规律，浸泡初期（前3 d）SRB处于对数增长期，浸泡后期（4 d后）SRB进入稳定生长期。利用AFM技术和EIS电化学方法研究了SRB生物膜对HSn70-1AB铜合金电极界面的影响。AFM分析表明，浸泡后期合金表面生物膜粗糙度较前期有所下降。EIS结果表明，浸泡前3 d，合金表面氧化膜层较为稳定，氧化膜层电容值变化不明显。浸泡7 d后，合金表面氧化膜遭受局部腐蚀，开始出现微孔，粗糙度增加，氧化膜层电容值增大。
Growth characteristics of Sulfate Reducing Bacteria (SRB) was tested. The SRB was in logarithmic-phase growth during the first three days and turn into stationary-phase growth since then. Atomic Force Microscopy (AFM) and Electrochemical Impedance Spectroscopy, respectively (EIS) have been used to investigate the effect of biofilm on phase boundary of HSn70-1 AB copper alloy and solution. The study using AFM showed that SRB cells adhered to the surface of copper alloy and the biofilm formed during three days immergence were observed. Roughness of three-day-old biofilm formed on the alloys was 44.7nm, while roughness of the biofilm decreased to 25.8nm after 14 days immergence. The simulative date of EIS spectrum revealed that transfer resistance (Re) of the electric double layer on the alloy surface increases with the immergence prolonged. Furthermore, capacitance value (Yp) of oxidation film on the alloy surface changed seriously, which indicated the structure of oxidation film was impacted.
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