极薄氧化物/6H-SiC结构的电学和光学性质研究

冶金分析 , 2011, 31(12): 15-20.

极薄氧化物/6H-SiC结构的电学和光学性质研究

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1.斯洛伐克科学院物理研究所,Dubravska cesta 9,84511 伯拉第斯拉瓦,斯洛伐克共和国

2.科学与工业研究所;大阪大学,Mihogaoka,茨城,大阪567-0047,日本

3.科学与工业研究所;大阪大学,Mihogaoka,茨城,大阪567-0047,日本

4.斯洛伐克科学院物理研究所,Dubravska cesta 9,84511 伯拉第斯拉瓦,斯洛伐克共和国

5.科学与工业研究所;大阪大学,Mihogaoka,茨城,大阪567-0047,日本

6.化学、食品技术和应用光化学系,Radlinskeho 9,SUT,81239 伯拉第斯拉瓦,斯洛伐克共和国

7.斯洛伐克科学院物理研究所,Dubravska cesta 9,84511伯拉第斯拉瓦,斯洛伐克共和国

基金项目: 非常感谢对日本学术振兴会(JSPS)和下述斯洛伐克基金会APVV-项目(0577/07) VEGA-项目(2/0123/09)

关键词：碳化硅 , MOS , 硝酸氧化 , 傅里叶变换红外光谱 , 深能阶瞬态光谱

On electrical and optical properties of very thin oxide/6H-SiC structures

研究了湿化学法(120℃硝酸氧化,还有低温湿法氧化过程和高温退火组合)制备的极薄氧化物/6H-SiC结构的电学和光学性质.用深能阶暂态光谱学(电荷版)分析了电界面性质,用傅里叶变换衰减全反射红外光谱考察了极薄氧化物/6H-SiC结构的光学性质.发现界面缺陷结构的强转换依赖于应用的技术条件.

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