TaN薄膜是一种重要的高新技术材料,主要介绍了物理气相沉积法(PVD)、金属有机化学气相沉积法(MOCVD)和原子层沉积法(ALD)制备TaN薄膜的工艺技术,评述了它们各自的优缺点.从前驱体的选择方面详细评述了MOCVD法和ALD法制备TaN薄膜的研究进展,比较和评述了各类前驱体的优缺点.总结了TaN薄膜的应用现状以及薄膜制备过程中的主要影响因素,并简要展望了其发展方向.
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