为制备符合Si集成铁电器件要求的高质量Si基铁电薄膜,采用溶胶-凝胶(sol-gel)工艺,制备了MFM及MFS结构的铁电薄膜系统.研究了不同结构及不同衬底对铁电薄膜系统铁电性能及电滞回线的影响,并对这些差异产生的主要影响因素进行了分析.在此基础上,提出并制备了Ag/Pb(Zr0.52Ti0.48)O3/Bi4Ti3O12/p-Si多层结构,该结构铁电薄膜系统的铁电性能及电滞回线的对称性有明显改善,有望应用于Si集成铁电器件.
In order to fabricate high quality ferroelectric thin films qualified for ferroelectric memories, different ferroelectric thin film systems, with the structures of MFM and MFS, were deposited by using the sol-gel technique. The ferroelectric properties and the P-V hysteresis loops characteristics of these different ferroelectric thin film systems were analyzed with comparison. Based on the test results, a new practicable configuration of Ag/Pb(Zr0.52Ti0.48)O3/ Bi4Ti3O12/p-Si was fabricated, which can improve the ferroelectric properties and hysteresis loops characteristics of the ferroelectric thin films.
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