对掺杂过渡金属(TM)制备得到的ZnO基稀磁半导体的磁性起源作了理论和实验两方面知识的调研,在理论方面主要介绍了几种磁性交换的模型:直接超交换和间接超交换、载流子媒介交换和跃迁磁板子.在实验方面分析众多国内外相关文献,发现选择正确的生长条件对于成功获得稀磁半导体至关重要,低生长温度、高氧偏压和较少的TM离子掺杂浓度能促使TM掺杂物的均一分布,并能削弱反铁磁性(AFM)交换进而增进铁磁性(FM)交换.同时据文献报道发现很多样品的磁性并不是固有的,载流子尤其空穴的存在对于铁磁交换作用起着至关重要的作用.
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