THE EFFECTS OF PULSE BIAS VOLTAGE AND N2 PARTIAL PRESSURE ON TiAIN FILMS OF ARC ION PLATING (AIP)

金属学报(英文版), 2001, 14(6): 520-524.

^1, , ^2, , ^3, , ^4, , ^5,

1.Institute of Metal Research, The Chinese Academy of Sciences, Shenyang 110016, China

2.Institute of Metal Research, The Chinese Academy of Sciences, Shenyang 110016, China

3.Institute of Metal Research, The Chinese Academy of Sciences, Shenyang 110016, China

4.Institute of Metal Research, The Chinese Academy of Sciences, Shenyang 110016, China

5.Institute of Metal Research, The Chinese Academy of Sciences, Shenyang 110016, China

THE EFFECTS OF PULSE BIAS VOLTAGE AND N2 PARTIAL PRESSURE ON TiAIN FILMS OF ARC ION PLATING (AIP)

Keywords： TiAlN film

Owing to the characteristics of arc ion plating(AIP) technique, the structure and com-position of TiAlN films can be tailored by controlling of various parameters such ascompositions of target materials, N2 partial pressure, substrate bias and so on. ln thisstudy, several titanium aluminum nitride films were deposited on 1Cr11Ni2 W2Mo Vsteel for compressor blade of areo-engine under different d.c pulse bias voltage and ni-trogen partial pressure. The effects of substrate pulse bias and nitrogen partial pressureon the deposition rate, droplet formation, microstruture and elemental component ofthe films were investigated.

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THE EFFECTS OF PULSE BIAS VOLTAGE AND N2 PARTIAL PRESSURE ON TiAIN FILMS OF ARC ION PLATING (AIP)

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