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Plasma ion implantation, an alternative to conventional beam-line ion implantation, is a sheath-acceleration ionbombardment technique and the initial sheath is crucial to the process efficacy and surface properties. The initialspatial potential distributi

参考文献

[1] J R Conrad;J L Radke;R A Dodd;F J Worzala .[J].Journal of Applied Physics,1987,62:4951.
[2] S Mandl;B Rauschenbach .[J].Surface and Coatings Technology,2002,156:276.
[3] P P Smith;R A Buchanan;J R Roth;S G Kamath .[J].Journal of Vacuum Science and Technology B:Microelectronics and Nanometer Structures,1994,12:940.
[4] P K Chu;S Qin;C Chan;N W Cheung, ,P K Ko .[J].IEEE Transactions on Plasma Science,1998,26:79.
[5] X B Tian;B Y Tang;P K Chu .[J].Journal of Applied Physics,1999,86:3567.
[6] T E Sheridan;J D Phys .[J].Journal of Applied Physiology,1995,28:1094.
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